{"id":2960,"date":"2024-08-25T22:01:27","date_gmt":"2024-08-25T22:01:27","guid":{"rendered":"https:\/\/workhouse.sweetdishy.com\/?p=2960"},"modified":"2024-08-30T11:35:14","modified_gmt":"2024-08-30T11:35:14","slug":"metal-oxide-semiconductor-field-effect-transistors","status":"publish","type":"post","link":"https:\/\/workhouse.sweetdishy.com\/index.php\/2024\/08\/25\/metal-oxide-semiconductor-field-effect-transistors\/","title":{"rendered":"Metal-Oxide Semiconductor Field-Effect Transistors"},"content":{"rendered":"\n<p id=\"P0130\">Another family of transistors is known as\u00a0<em>metal-oxide semiconductor field-effect transistors (MOSFETs)<\/em>\u00a0of which there are two basic types called\u00a0<em>n-channel<\/em>\u00a0and\u00a0<em>p-channel<\/em>; once again these names relate to the way in which the silicon is doped (Figure 10.7).<\/p>\n\n\n\n<figure class=\"wp-block-image\"><img decoding=\"async\" src=\"https:\/\/learning.oreilly.com\/api\/v2\/epubs\/urn:orm:book:9781856175289\/files\/images\/F00010Xgr7.jpg\" alt=\"image\"\/><\/figure>\n\n\n\n<p><strong>Figure 10.7<\/strong>&nbsp;Metal-oxide semiconductor field-effect transistors (MOSFETs) (a) NMOS field-effect transistor; (b) PMOS field-effect transistor<\/p>\n\n\n\n<p id=\"P0140\">In the case of these devices, the&nbsp;<em>drain<\/em>&nbsp;and&nbsp;<em>source<\/em>&nbsp;form the&nbsp;<em>data<\/em>&nbsp;terminals and the&nbsp;<em>gate<\/em>&nbsp;acts as the&nbsp;<em>control<\/em>&nbsp;terminal. Unlike bipolar devices, the control terminal is connected to a conducting plate, which is insulated from the silicon by a layer of non-conducting oxide. In the original devices the conducting plate was metal\u2014hence, the term&nbsp;<em>metal-oxide<\/em>.<a><\/a>&nbsp;When a signal is applied to the gate terminal, the plate, insulated by the oxide, creates an electromagnetic field, which turns the transistor ON or OFF\u2014hence, the term&nbsp;<em>field-effect<\/em>.<\/p>\n\n\n\n<p id=\"P0150\">Now this is the bit that always confuses the unwary, because the term&nbsp;<em>channel<\/em>&nbsp;refers to the piece of silicon under the gate terminal, that is, the piece linking the drain and source regions. But the channel in the n-channel device is formed from P-type material, while the channel in the p-channel device is formed from N-type material.<\/p>\n\n\n\n<p id=\"P0160\">At first glance, this would appear to be totally counterintuitive, but there is reason behind the madness. Let\u2019s consider the n-channel device. In order to turn this ON, a positive voltage is applied to the gate. This positive voltage attracts negative electrons in the P-type material and causes them to accumulate beneath the oxide layer where they form a negative channel\u2014hence, the term&nbsp;<em>n-channel<\/em>. In fact, saying \u201cn-channel\u201d and \u201cp-channel\u201d is a bit of a mouthful, so instead we typically just refer to these as NMOS and PMOS transistors, respectively.<\/p>\n\n\n\n<p id=\"P0170\">This chapter concentrates on MOSFETs, because their symbols, construction, and operation are easier to understand than those of bipolar junction transistors.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Another family of transistors is known as\u00a0metal-oxide semiconductor field-effect transistors (MOSFETs)\u00a0of which there are two basic types called\u00a0n-channel\u00a0and\u00a0p-channel; once again these names relate to the way in which the silicon is doped (Figure 10.7). Figure 10.7&nbsp;Metal-oxide semiconductor field-effect transistors (MOSFETs) (a) NMOS field-effect transistor; (b) PMOS field-effect transistor In the case of these devices, the&nbsp;drain&nbsp;and&nbsp;source&nbsp;form [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":2487,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[417],"tags":[],"class_list":["post-2960","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-digital-electronics"],"jetpack_featured_media_url":"https:\/\/workhouse.sweetdishy.com\/wp-content\/uploads\/2024\/08\/smartphone_5337695.png","_links":{"self":[{"href":"https:\/\/workhouse.sweetdishy.com\/index.php\/wp-json\/wp\/v2\/posts\/2960","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/workhouse.sweetdishy.com\/index.php\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/workhouse.sweetdishy.com\/index.php\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/workhouse.sweetdishy.com\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/workhouse.sweetdishy.com\/index.php\/wp-json\/wp\/v2\/comments?post=2960"}],"version-history":[{"count":2,"href":"https:\/\/workhouse.sweetdishy.com\/index.php\/wp-json\/wp\/v2\/posts\/2960\/revisions"}],"predecessor-version":[{"id":3321,"href":"https:\/\/workhouse.sweetdishy.com\/index.php\/wp-json\/wp\/v2\/posts\/2960\/revisions\/3321"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/workhouse.sweetdishy.com\/index.php\/wp-json\/wp\/v2\/media\/2487"}],"wp:attachment":[{"href":"https:\/\/workhouse.sweetdishy.com\/index.php\/wp-json\/wp\/v2\/media?parent=2960"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/workhouse.sweetdishy.com\/index.php\/wp-json\/wp\/v2\/categories?post=2960"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/workhouse.sweetdishy.com\/index.php\/wp-json\/wp\/v2\/tags?post=2960"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}